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| قسم الهاردوير مناقشة كل ما تعلق بمجال Hardware وعتاد الحاسب الآلي |
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أدوات الموضوع |
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لى سؤال بخصوص الترانزيستور
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السلام عليكم
جزاك الله خير اخى على السؤال وفعلا عندك حق انا بحثت له على داتاشيت ولقيتها بس توهت فيها وهذه هى الداتا اللى لقيتها نرجوا من الاخ هريدى او الاخ صلاح او الاخ الوليد او الاخ احمد ابوعلى ان يسهلوا علينا الموضوع جزاهم الله الف الف خير Part: PHD95N03LT Category: Discrete -> Transistors -> FETs (Field Effect Transistors) -> MOSFETs -> Power MOSFETs -> N-Channel Description: PHD95N03LT; Trenchmos (tm) Logic Level Fet Company: Philips Semiconductors Datasheet : download File size : 89 kB Datasheet text preview: PHD95N03LT TrenchMOSTM logic level FET Rev. 02 -- 8 February 2002 M3D300 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOSTM1 technology. Product availability: PHD95N03LT in SOT428 (D-PAK). 2. Features s Low on-state resistance s Fast switching. 3. Applications s High frequency computer motherboard DC to DC converters. 4. Pinning information Table 1: Pin 1 2 3 mb Pinning - SOT428, simplified outline and symbol Description gate (g) drain (d) source (s) mounting base, connected to drain (d) 2 1 Top view 3 MBK091 Simplified outline [1] Symbol d mb g s MBB076 SOT428 (D-PAK) [1] It is not possible to make connection to pin 2 of the SOT428 package. 1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.. Philips Semiconductors PHD95N03LT TrenchMOSTM logic level FET 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 175 °C Tmb = 25 °C; VGS = 5 V Tmb = 25 °C VGS = 10 V; ID = 25 A VGS = 5 V; ID = 25 A Typ 5 7.5 Max 25 75 115 175 7 9 Unit V A W °C m m drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR ID VGS IDM Ptot Tstg Tj IS ISM EAS drain-source voltage (DC) drain-gate voltage (DC) drain current (DC) gate-source voltage peak drain current total power dissipation storage temperature operating junction temperature source (diode forward) current (DC) Tmb = 25 °C peak source (diode forward) current Tmb = 25 °C; pulsed; tp 10  s non-repetitive avalanche energy unclamped inductive load; ID = 75 A; tp = 0.1 ms; VDD = 15 V; RGS = 50 ; VGS = 5V; starting Tj = 25 °C unclamped inductive load; VDD = 15 V; RGS = 50 ; VGS = 5V; star ting Tj = 25 °C Tmb = 25 °C; pulsed; tp 10 s; Figure 3 Tmb = 25 °C; Figure 1 Conditions Tj = 25 to 175 °C Tj = 25 to 175 °C; RGS = 20 k Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 Tmb = 100 °C; VGS = 5 V; Figure 2 Min -55 -55 Max 25 25 75 61  20 240 115 +175 +175 75 240 120 Unit V V A A V A W °C °C A A mJ Source-drain diode Avalanche ruggedness IAS non-repetitive avalanche current - 75 A 9397 750 09286 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 02 -- 8 February 2002 2 of 12 Philips Semiconductors PHD95N03LT TrenchMOSTM logic level FET 03aa16 03ae86 120 Pder 120 Ider (%) 80 (%) 80 40 40 0 0 50 100 150 200 o Tmb ( C) 0 0 50 100 150 200 Tmb (ºC) Pt o t P d e r = ---------------------- × 100 % P ° t o t ( 25 C ) ID I d e r = ------------------- × 100 % I ° D ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Normalized continuous drain current as a function of mounting base temperature. 103 03ae87 ID (A) RDSon = VDS / ID tp = 10 s 100 s 102 1 ms DC 10 ms 100 ms 10 1 1 10 VDS (V) 102 Tmb = 25 °C; IDM is single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 09286 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. Product data Rev. 02 -- 8 February 2002 3 of 12 |
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