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STP16NF06
STP16NF06FP
N-CHANNEL 60V - 0.08
W - 16A TO-220/TO-220FP
STripFET™ II POWER MOSFET
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TYPICAL RDS(on) = 0.08W
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EXCEPTIONAL dv/dt CAPABILITY
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LOW GATE CHARGE AT 100 oC
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APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance,
rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
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MOTOR CONTROL, AUDIO AMPLIFIERS
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HIGH CURRENT, HIGH SWITCHING SPEED
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SOLENOID AND RELAY DRIVERS
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DC-DC & DC-AC CONVERTERS
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AUTOMOTIVE ENVIRONMENT
P
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
(
·) Pulse width limited by safe operating area.
(*) Current Limited by package’s thermal resistance
(1) I
SD £ 16A, di/dt £ 200A/μs, VDD £ V(BR)DSS, Tj £ TJMAX.
(2) Starting T
j = 25 oC, ID = 8A, VDD = 30V
Symbol Parameter Value Unit
STP16NF06 STP16NF06FP
V
DS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain-gate Voltage (RGS = 20 kW) 60 V
VGS Gate- source Voltage 
20 V
ID Drain Current (continuous) at TC = 25°C 16 11(*) A
ID Drain Current (continuous) at TC = 100°C 11 7.5(*) A
IDM(·) Drain Current (pulsed) 64 44(*) A
Ptot Total Dissipation at TC = 25°C 45 25 W
Derating Factor 0.3 0.17 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 20 V/ns
EAS (2) Single Pulse Avalanche Energy 130 mJ
VISO Insulation Withstand Voltage (DC) -------- 2500 V
Tstg Storage Temperature
-55 to 175 °C
Tj Operating Junction Temperature
مساعدة فى ترانسستر محول 220-12 v
