 |
|
|
|
|||||
مساعدة فى ترانسستر محول 220-12 v
|
| اعلانات |
|
|||||
|
تفضل يا اخى هذا ما وجدتة للرقم . STP16NF06 STP16NF06FP N-CHANNEL 60V - 0.08 W - 16A TO-220/TO-220FP STripFET™ II POWER MOSFET n TYPICAL RDS(on) = 0.08W n EXCEPTIONAL dv/dt CAPABILITY n LOW GATE CHARGE AT 100 oC n APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS n MOTOR CONTROL, AUDIO AMPLIFIERS n HIGH CURRENT, HIGH SWITCHING SPEED n SOLENOID AND RELAY DRIVERS n DC-DC & DC-AC CONVERTERS n AUTOMOTIVE ENVIRONMENT P INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS ( ·) Pulse width limited by safe operating area. (*) Current Limited by package’s thermal resistance (1) I SD £ 16A, di/dt £ 200A/μs, VDD £ V(BR)DSS, Tj £ TJMAX. (2) Starting T j = 25 oC, ID = 8A, VDD = 30V Symbol Parameter Value Unit STP16NF06 STP16NF06FP V DS Drain-source Voltage (VGS = 0) 60 V VDGR Drain-gate Voltage (RGS = 20 kW) 60 V VGS Gate- source Voltage  20 VID Drain Current (continuous) at TC = 25°C 16 11(*) A ID Drain Current (continuous) at TC = 100°C 11 7.5(*) A IDM(·) Drain Current (pulsed) 64 44(*) A Ptot Total Dissipation at TC = 25°C 45 25 W Derating Factor 0.3 0.17 W/°C dv/dt (1) Peak Diode Recovery voltage slope 20 V/ns EAS (2) Single Pulse Avalanche Energy 130 mJ VISO Insulation Withstand Voltage (DC) -------- 2500 V Tstg Storage Temperature -55 to 175 °C Tj Operating Junction Temperature |
| اعلانات اضافية ( قم بتسجيل الدخول لاخفائها ) | |
|
|
